| Themes > Science > Physics > Molecular Physics > Excitation Energy Transfer and Energy Migration > Ionization > Introduction |
In modeling and simulation of plasma processing applications, quantitative data are needed on the many reactions involving neutral species and positive and negative ions under practical industrial conditions, especially for those substances that are used directly in plasma deposition and etching. For each chemistry to be considered, ideally, electron collision processes involving all possible reactants, products, and intermediates must be investigated. Cross sections or probabilities for the various reaction channels (ionization, excitation, dissociation, attachment, and recombination) will depend on plasma conditions of temperature and on the energy state of the target species. In this chapter, the general availability of electron-impact cross section data is discussed for each reaction channel. Potential sources of new data, both experimental and theoretical, are described. A set of typical plasma processing substances serve as examples in the discussion of electron-collision cross section availability. These include deposition compounds SiH4 and SiO2; etching gases Cl, Br, Cl2, HCl, F2, HBr, BCl3, and CF4; and decomposition and etching products SiClx and SiBrx. |
|
|